{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508577","patent":{"patent_number":"US-11508577","title":"Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)","assignee":null,"inventors":[],"filing_date":"2018-06-29T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","B82Y","H01L"],"num_claims":17,"abstract":"Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device including a substrate and an insulator layer above the substrate. A channel area may include an III-V material relaxed grown on the insulator layer. A source area may be above the insulator layer, in contact with the insulator layer, and adjacent to a first end of the channel area. A drain area may be above the insulator layer, in contact with the insulator layer, and adjacent to a second end of the channel area that is opposite to the first end of the channel area. The source area or the drain area may include one or more seed components including a seed material with free surface. Other embodiments may be described and/or claimed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)","description":"Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device including a substrate and an insulator layer above the sub","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508577","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508577","citation_suggestion":"Patentable. \"Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)\" (US-11508577). https://patentable.app/patents/US-11508577","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508577","json":"https://patentable.app/api/llm-context/US-11508577","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:01:27.836Z"}