{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508581","patent":{"patent_number":"US-11508581","title":"Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium","assignee":null,"inventors":[],"filing_date":"2020-10-15T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Plural sessions of proton irradiation are performed by differing ranges from a substrate rear surface side. After first to fourth n-type layers of differing depths are formed, the protons are activated. Next, helium is irradiated to a position deeper than the ranges of the proton irradiation from the substrate rear surface, introducing lattice defects. When the amount of lattice defects is adjusted by heat treatment, protons not activated in a fourth n-type layer are diffused, forming a fifth n-type layer contacting an anode side of the fourth n-type layer and having a carrier concentration distribution that decreases toward the anode side by a more gradual slope than that of the fourth n-type layer. The fifth n-type layer that includes protons and helium and the first to fourth n-type layers that include protons constitute an n-type FS layer. Thus, a semiconductor device having improved reliability and lower cost may be provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium","description":"Plural sessions of proton irradiation are performed by differing ranges from a substrate rear surface side. After first to fourth n-type layers of differing depths are formed, the protons are activate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508581","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508581","citation_suggestion":"Patentable. \"Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium\" (US-11508581). https://patentable.app/patents/US-11508581","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508581","json":"https://patentable.app/api/llm-context/US-11508581","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:07:45.067Z"}