{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508583","patent":{"patent_number":"US-11508583","title":"Selective high-k formation in gate-last process","assignee":null,"inventors":[],"filing_date":"2021-03-16T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method includes removing a dummy gate stack to form an opening between gate spacers, selectively forming an inhibitor film on sidewalls of the gate spacers, with the sidewalls of the gate spacers facing the opening, and selectively forming a dielectric layer over a surface of a semiconductor region. The inhibitor film inhibits growth of the dielectric layer on the inhibitor film. The method further includes removing the inhibitor film, and forming a replacement gate electrode in a remaining portion of the opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective high-k formation in gate-last process","description":"A method includes removing a dummy gate stack to form an opening between gate spacers, selectively forming an inhibitor film on sidewalls of the gate spacers, with the sidewalls of the gate spacers fa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508583","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508583","citation_suggestion":"Patentable. \"Selective high-k formation in gate-last process\" (US-11508583). https://patentable.app/patents/US-11508583","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508583","json":"https://patentable.app/api/llm-context/US-11508583","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:57:01.741Z"}