{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508625","patent":{"patent_number":"US-11508625","title":"Method of making a continuous channel between 3D CMOS","assignee":null,"inventors":[],"filing_date":"2020-12-16T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"A semiconductor device includes a first n-type transistor and a first p-type transistor that are positioned side by side over a substrate. The first n-type transistor includes a first n-type source/drain (S/D) region, a first n-type channel region, and a second n-type S/D region that are formed based on a first continuous channel structure extending along a horizontal direction parallel to the substrate. The first n-type channel region is positioned between the first n-type S/D region and the second n-type S/D region. The first p-type transistor includes a first p-type S/D region, a first p-type channel region, and a second p-type S/D region that are formed based on the first continuous channel structure. The first p-type channel region is positioned between the first p-type S/D region and the second p-type S/D region. The second n-type S/D region is in contact with the first p-type S/D region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of making a continuous channel between 3D CMOS","description":"A semiconductor device includes a first n-type transistor and a first p-type transistor that are positioned side by side over a substrate. The first n-type transistor includes a first n-type source/dr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508625","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508625","citation_suggestion":"Patentable. \"Method of making a continuous channel between 3D CMOS\" (US-11508625). https://patentable.app/patents/US-11508625","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508625","json":"https://patentable.app/api/llm-context/US-11508625","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:26:11.226Z"}