{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508629","patent":{"patent_number":"US-11508629","title":"Nitride semiconductor laminate, method for manufacturing nitride semiconductor laminate, method for manufacturing semiconductor laminate, and method for inspecting semiconductor laminate","assignee":null,"inventors":[],"filing_date":"2017-04-03T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"There is provided a nitride semiconductor laminate, including: a substrate; an electron transit layer provided on the substrate and containing a group III nitride semiconductor; and an electron supply layer provided on the electron transit layer and containing a group III nitride semiconductor, wherein a surface force A of the electron supply layer acting as an attractive force for attracting a probe and a surface of the electron supply layer when measured using the probe consisting of a glass sphere with a diameter of 1 mm covered with Cr, is stronger than a surface force B of Pt when measured under the same condition, and an absolute value |A−B| of a difference between them is 30 μN or more."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor laminate, method for manufacturing nitride semiconductor laminate, method for manufacturing semiconductor laminate, and method for inspecting semiconductor laminate","description":"There is provided a nitride semiconductor laminate, including: a substrate; an electron transit layer provided on the substrate and containing a group III nitride semiconductor; and an electron supply","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508629","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508629","citation_suggestion":"Patentable. \"Nitride semiconductor laminate, method for manufacturing nitride semiconductor laminate, method for manufacturing semiconductor laminate, and method for inspecting semiconductor laminate\" (US-11508629). https://patentable.app/patents/US-11508629","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508629","json":"https://patentable.app/api/llm-context/US-11508629","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:14:40.513Z"}