{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508659","patent":{"patent_number":"US-11508659","title":"Interconnect structure in semiconductor device and method of forming the same","assignee":null,"inventors":[],"filing_date":"2020-09-10T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a gate electrode extending in a first direction in a first layer over an active region, a first conductive line extending in the first layer adjacent to the gate electrode, a first power rail extending in a second direction perpendicular to the first direction in a second layer over the first layer, a second conductive line arranged in a third layer over the second layer, and a conductive via extending through the first power rail and electrically connecting the second conductive line to one of the gate electrode and the first conductive line. The conductive via is electrically insulated from the first power rail."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interconnect structure in semiconductor device and method of forming the same","description":"A semiconductor device includes a gate electrode extending in a first direction in a first layer over an active region, a first conductive line extending in the first layer adjacent to the gate electr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508659","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508659","citation_suggestion":"Patentable. \"Interconnect structure in semiconductor device and method of forming the same\" (US-11508659). https://patentable.app/patents/US-11508659","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508659","json":"https://patentable.app/api/llm-context/US-11508659","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:31:24.301Z"}