{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508693","patent":{"patent_number":"US-11508693","title":"High capacity memory module including wafer-section memory circuit","assignee":null,"inventors":[],"filing_date":"2020-12-16T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","G11C","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A memory device includes a first semiconductor wafer portion including two or more adjacent quasi-volatile memory circuits formed on a common semiconductor substrate where each quasi-volatile memory circuit being isolated from an adjacent quasi-volatile memory circuit by scribe lines; and a second semiconductor wafer portion including at least one memory controller circuit formed on a semiconductor substrate. The memory controller circuit includes logic circuits and interface circuits. The memory controller circuit is interconnected to the two or more adjacent quasi-volatile memory circuits of the first semiconductor wafer portion through interconnect structures and the memory controller circuit operates the two or more quasi-volatile memory circuits as one or more quasi-volatile memories."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High capacity memory module including wafer-section memory circuit","description":"A memory device includes a first semiconductor wafer portion including two or more adjacent quasi-volatile memory circuits formed on a common semiconductor substrate where each quasi-volatile memory c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508693","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508693","citation_suggestion":"Patentable. \"High capacity memory module including wafer-section memory circuit\" (US-11508693). https://patentable.app/patents/US-11508693","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508693","json":"https://patentable.app/api/llm-context/US-11508693","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:41:52.348Z"}