{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508725","patent":{"patent_number":"US-11508725","title":"Layout construction for addressing electromigration","assignee":null,"inventors":[],"filing_date":"2020-01-30T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect and a second interconnect. The first interconnect is on an interconnect level extending in a length direction to connect the PMOS drains together, and the second interconnect is on the interconnect level extending in the length direction to connect the NMOS drains together. A set of interconnects on at least one additional interconnect level physically couple the first interconnect and the second interconnect to an output of the CMOS device. A third interconnect on the interconnect level extends perpendicular to the length direction and offset from the set of interconnects. The third interconnect is capable of flowing current from the PMOS drains or from the NMOS drains to the output of the CMOS device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Layout construction for addressing electromigration","description":"A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect and a second interconnect. The f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508725","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508725","citation_suggestion":"Patentable. \"Layout construction for addressing electromigration\" (US-11508725). https://patentable.app/patents/US-11508725","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508725","json":"https://patentable.app/api/llm-context/US-11508725","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:03:02.703Z"}