{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508739","patent":{"patent_number":"US-11508739","title":"Method of manufacturing memory structure","assignee":null,"inventors":[],"filing_date":"2020-05-21T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method of manufacturing a memory structure including the following steps is provided. A first pad layer is formed on a substrate. Isolation structures are formed in the first pad layer and the substrate. At least one shape modification treatment is performed on the isolation structures. Each shape modification treatment includes the following steps. A first etching process is performed on the first pad layer to reduce a height of the first pad layer and to form first openings exposing sidewalls of the isolation structures. After the first etching process is performed, a second etching process is performed on the isolation structures to modify shapes of the sidewalls of the isolation structures exposed by the first openings. The first pad layer is removed to form a second opening between two adjacent isolation structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing memory structure","description":"A method of manufacturing a memory structure including the following steps is provided. A first pad layer is formed on a substrate. Isolation structures are formed in the first pad layer and the subst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508739","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508739","citation_suggestion":"Patentable. \"Method of manufacturing memory structure\" (US-11508739). https://patentable.app/patents/US-11508739","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508739","json":"https://patentable.app/api/llm-context/US-11508739","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:11:46.183Z"}