{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508744","patent":{"patent_number":"US-11508744","title":"Memory devices and methods of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-06-17T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A memory device may include a substrate; a first stack structure comprising a plurality of first gate layers and a plurality of first interlayer insulating layers alternately stacked on the substrate; a second stack structure comprising a plurality of second gate layers and a plurality of second interlayer insulating layers alternately stacked on the first stack structure; and a channel structure penetrating the first stack structure and the second stack structure, wherein the channel structure comprises a first portion in a first channel hole penetrating the first stack structure, a second portion in a second channel hole penetrating the second stack structure, and a first protrusion located in a first recess recessed into one layer of the plurality of first interlayer insulating layers from a side portion of the first channel hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory devices and methods of manufacturing the same","description":"A memory device may include a substrate; a first stack structure comprising a plurality of first gate layers and a plurality of first interlayer insulating layers alternately stacked on the substrate;","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508744","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508744","citation_suggestion":"Patentable. \"Memory devices and methods of manufacturing the same\" (US-11508744). https://patentable.app/patents/US-11508744","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508744","json":"https://patentable.app/api/llm-context/US-11508744","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:58:00.086Z"}