{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508747","patent":{"patent_number":"US-11508747","title":"Semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2020-05-06T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":19,"abstract":"A semiconductor memory device includes: a stacked structure including first and second select patterns spaced apart from each other in a first direction; a gate isolation layer extending in a second direction intersecting the first direction between the first and second select patterns; channel structures penetrating the stack structure; and first and second bit lines extending in the first direction, the first and second bit lines being adjacent to each other. The channel structures include: a first channel structure which penetrates the first select pattern and is spaced apart by a first distance from the gate isolation layer in the first direction; and a second channel structure which penetrates the second select pattern and is spaced apart by substantially the first distance from the gate isolation layer in the first direction. The first and second channel structures are respectively connected to the second and first bit lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device","description":"A semiconductor memory device includes: a stacked structure including first and second select patterns spaced apart from each other in a first direction; a gate isolation layer extending in a second d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508747","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508747","citation_suggestion":"Patentable. \"Semiconductor memory device\" (US-11508747). https://patentable.app/patents/US-11508747","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508747","json":"https://patentable.app/api/llm-context/US-11508747","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:22:24.397Z"}