{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508749","patent":{"patent_number":"US-11508749","title":"Cutoff gate electrodes for switches for a three-dimensional memory device and method of making the same","assignee":null,"inventors":[],"filing_date":"2020-06-15T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":6,"abstract":"A semiconductor structure includes a first-conductivity-type well located in a semiconductor substrate, a semiconductor active area region located adjacent to the a first-conductivity-type well, a first transistor including a source region, a drain region, a channel region located between the source region and the drain region, a gate dielectric layer located over the channel region and a gate electrode located over the gate dielectric layer, such that the transistor is located on the semiconductor active area region, and a cutoff gate electrode located over the semiconductor active area region, and between the first transistor and the first-conductivity-type well."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cutoff gate electrodes for switches for a three-dimensional memory device and method of making the same","description":"A semiconductor structure includes a first-conductivity-type well located in a semiconductor substrate, a semiconductor active area region located adjacent to the a first-conductivity-type well, a fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508749","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508749","citation_suggestion":"Patentable. \"Cutoff gate electrodes for switches for a three-dimensional memory device and method of making the same\" (US-11508749). https://patentable.app/patents/US-11508749","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508749","json":"https://patentable.app/api/llm-context/US-11508749","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:00:26.299Z"}