{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508823","patent":{"patent_number":"US-11508823","title":"Low capacitance low RC wrap-around-contact","assignee":null,"inventors":[],"filing_date":"2020-12-23T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","B82Y","H01L","H01L","H01L"],"num_claims":20,"abstract":"A field effect transistor is provided. The field effect transistor includes a first source/drain on a substrate, a second source/drain on the substrate, and a channel region between the first source/drain and the second source/drain. The field effect transistor further includes a metal liner on at least three sides of the first source/drain and/or the second source/drain, wherein the metal liner covers less than the full length of a sidewall of the first source/drain and/or the second source/drain. The field effect transistor further includes a metal-silicide between the metal liner and the first source/drain and/or the second source/drain, and a conductive contact on the metal liner on the first source/drain and/or the second source/drain, wherein the conductive contact is a conductive material different from the conductive material of the metal liner."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low capacitance low RC wrap-around-contact","description":"A field effect transistor is provided. The field effect transistor includes a first source/drain on a substrate, a second source/drain on the substrate, and a channel region between the first source/d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508823","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508823","citation_suggestion":"Patentable. \"Low capacitance low RC wrap-around-contact\" (US-11508823). https://patentable.app/patents/US-11508823","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508823","json":"https://patentable.app/api/llm-context/US-11508823","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:15:28.338Z"}