{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508836","patent":{"patent_number":"US-11508836","title":"Semiconductor device including trench gate structure with specific volume ratio of gate electrodes","assignee":null,"inventors":[],"filing_date":"2020-04-30T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"A semiconductor device includes a semiconductor substrate, multiple trench gate structures and an emitter region. The semiconductor substrate includes: a drift layer of a first conductivity type; a base layer of a second conductivity type disposed on the drift layer; and a collector layer of the second conductivity type, the collector layer disposed at a position opposite to the base layer with the drift layer sandwiched between the base layer and the collector layer. Each of the trench gate structures includes: a trench penetrating the base layer and reaching the drift layer; a gate insulation film is disposed at a wall surface of the trench; and a gate electrode disposed on the gate insulation film. The emitter region is disposed on a surface layer portion of the base layer and is in contact with the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including trench gate structure with specific volume ratio of gate electrodes","description":"A semiconductor device includes a semiconductor substrate, multiple trench gate structures and an emitter region. The semiconductor substrate includes: a drift layer of a first conductivity type; a ba","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508836","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508836","citation_suggestion":"Patentable. \"Semiconductor device including trench gate structure with specific volume ratio of gate electrodes\" (US-11508836). https://patentable.app/patents/US-11508836","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508836","json":"https://patentable.app/api/llm-context/US-11508836","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:15:37.051Z"}