{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508837","patent":{"patent_number":"US-11508837","title":"Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-07-22T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An epitaxial structure for a high-electron-mobility transistor includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer sequentially stacked on one another in such order. The buffer layered unit includes at least one multiple quantum well structure containing a plurality of p-i-n heterojunction stacks. Each of the p-i-n heterojunction stacks includes p-type, i-type, and n-type layers which are alternately stacked along a direction away from the nucleation layer, and which are made of materials respectively represented by chemical formulas of AlxGa(1-x)N, AlyGa(1-y)N, and AlzGa(1-z)N. For each of the p-i-n heterojunction stacks, x gradually decreases and z gradually increases along the direction away from the nucleation layer, and y is consistent and ranges from 0 to 0.7."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same","description":"An epitaxial structure for a high-electron-mobility transistor includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer sequentially stacked on one another","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508837","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508837","citation_suggestion":"Patentable. \"Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same\" (US-11508837). https://patentable.app/patents/US-11508837","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508837","json":"https://patentable.app/api/llm-context/US-11508837","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:43:27.837Z"}