{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508839","patent":{"patent_number":"US-11508839","title":"High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2021-05-10T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":6,"abstract":"A method of fabricating high electron mobility transistor, including the steps of providing a substrate with active areas, forming a buffer layer, a channel layer and a barrier layer sequentially on the substrate and gate, source and drain on the barrier layer, forming a trench surrounding the channel layer and the barrier layer, and forming a trench isolation structure in the trench, wherein the trench isolation structure applies stress on the channel layer and the barrier layer and modify two-dimension electron gas (2DEG) or two-dimension hole gas (2DHG) of the high electron mobility transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the same","description":"A method of fabricating high electron mobility transistor, including the steps of providing a substrate with active areas, forming a buffer layer, a channel layer and a barrier layer sequentially on t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508839","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508839","citation_suggestion":"Patentable. \"High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the same\" (US-11508839). https://patentable.app/patents/US-11508839","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508839","json":"https://patentable.app/api/llm-context/US-11508839","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:57:29.722Z"}