{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508842","patent":{"patent_number":"US-11508842","title":"Fin field effect transistor with field plating","assignee":null,"inventors":[],"filing_date":"2020-07-06T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":24,"abstract":"An integrated circuit (IC) having a fin field effect transistor (FinFET) includes a substrate with a fin extending from a surface of the substrate. The fin includes a source region, a drain region, a drift region, and field plating oxide layer. The drift region is adjacent the drain region. The field plating oxide layer is on a first side, a second side, and a third side of the drift region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor with field plating","description":"An integrated circuit (IC) having a fin field effect transistor (FinFET) includes a substrate with a fin extending from a surface of the substrate. The fin includes a source region, a drain region, a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508842","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508842","citation_suggestion":"Patentable. \"Fin field effect transistor with field plating\" (US-11508842). https://patentable.app/patents/US-11508842","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508842","json":"https://patentable.app/api/llm-context/US-11508842","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:26:13.357Z"}