{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11508906","patent":{"patent_number":"US-11508906","title":"Semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2020-03-05T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"According to one embodiment, a semiconductor memory device includes: a first and a second wirings; a third wiring disposed between them; a first phase change layer disposed between the first and the third wirings; a first conducting layer disposed on a first wiring side surface of the first phase change layer; a second conducting layer disposed on a third wiring side surface of the first phase change layer; a second phase change layer disposed between the third and the second wirings; a third conducting layer disposed on a third wiring side surface of the second phase change layer; and a fourth conducting layer disposed on a second wiring side surface of the second phase change layer. The first and the fourth conducting layers have coefficients of thermal conductivity larger or smaller than the coefficients of thermal conductivity of the second and the third conducting layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device","description":"According to one embodiment, a semiconductor memory device includes: a first and a second wirings; a third wiring disposed between them; a first phase change layer disposed between the first and the t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11508906","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11508906","citation_suggestion":"Patentable. \"Semiconductor memory device\" (US-11508906). https://patentable.app/patents/US-11508906","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11508906","json":"https://patentable.app/api/llm-context/US-11508906","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:47:20.058Z"}