{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11512098","patent":{"patent_number":"US-11512098","title":"Scandium precursor for SC2O3 or SC2S3 atomic layer deposition","assignee":null,"inventors":[],"filing_date":"2016-10-01T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"Described are precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide. Such films may be utilized as dielectric layers in semiconductor manufacturing processes, particular for depositing dielectric films and the use of such films in various electronic devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Scandium precursor for SC2O3 or SC2S3 atomic layer deposition","description":"Described are precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide. Such films may be utilized as dielectric layers in semicondu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11512098","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11512098","citation_suggestion":"Patentable. \"Scandium precursor for SC2O3 or SC2S3 atomic layer deposition\" (US-11512098). https://patentable.app/patents/US-11512098","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11512098","json":"https://patentable.app/api/llm-context/US-11512098","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:24:43.139Z"}