{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11513165","patent":{"patent_number":"US-11513165","title":"Power semiconductor module and leakage current test method for the same","assignee":null,"inventors":[],"filing_date":"2020-06-01T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H02M","H02M","H02M","H02M","H02M"],"num_claims":9,"abstract":"A power semiconductor module including at least first and second power semiconductor elements, includes a first terminal, a first gate terminal, a second terminal, a second gate terminal, a third terminal and a common terminal. The first terminal connected to a first electrode of the first power semiconductor element. The first gate terminal connected to a gate of the first power semiconductor element. The second terminal connected to a first electrode of the second power semiconductor element. The second gate terminal connected to a gate of the second power semiconductor element. The third terminal connected to a second electrode of the first power semiconductor element and a second electrode of the second power semiconductor element. The common terminal that is connected to the first gate terminal through a first resistor and is connected to the second gate terminal through a second resistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power semiconductor module and leakage current test method for the same","description":"A power semiconductor module including at least first and second power semiconductor elements, includes a first terminal, a first gate terminal, a second terminal, a second gate terminal, a third term","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11513165","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11513165","citation_suggestion":"Patentable. \"Power semiconductor module and leakage current test method for the same\" (US-11513165). https://patentable.app/patents/US-11513165","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11513165","json":"https://patentable.app/api/llm-context/US-11513165","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:35:24.982Z"}