{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11514954","patent":{"patent_number":"US-11514954","title":"Variable resistance memory devices","assignee":null,"inventors":[],"filing_date":"2021-06-01T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"An integrated circuit memory device includes a plurality of row selection transistors and a dummy row selection transistor, on a substrate. A plurality of word lines and a plurality of dummy word lines are also provided on the substrate. A plurality of memory cells are provided, which are electrically connected to corresponding ones of the plurality of word lines. A plurality of dummy memory cells are provided, which are electrically connected to corresponding ones of the plurality of dummy word lines. A first wiring structure is provided, which electrically connects a first one of the plurality of word lines to a first one of the plurality of row selection transistors, and a second wiring structure is provided, which electrically connects the plurality of dummy word lines together and to the dummy row selection transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Variable resistance memory devices","description":"An integrated circuit memory device includes a plurality of row selection transistors and a dummy row selection transistor, on a substrate. A plurality of word lines and a plurality of dummy word line","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11514954","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11514954","citation_suggestion":"Patentable. \"Variable resistance memory devices\" (US-11514954). https://patentable.app/patents/US-11514954","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11514954","json":"https://patentable.app/api/llm-context/US-11514954","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:00:59.294Z"}