{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515140","patent":{"patent_number":"US-11515140","title":"Chamfered silicon carbide substrate and method of chamfering","assignee":null,"inventors":[],"filing_date":"2019-05-10T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Chamfered silicon carbide substrate and method of chamfering","description":"The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515140","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515140","citation_suggestion":"Patentable. \"Chamfered silicon carbide substrate and method of chamfering\" (US-11515140). https://patentable.app/patents/US-11515140","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515140","json":"https://patentable.app/api/llm-context/US-11515140","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:38:21.671Z"}