{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515169","patent":{"patent_number":"US-11515169","title":"Method of making a semiconductor device including etching of a metal silicate using sequential and cyclic application of reactive gases","assignee":null,"inventors":[],"filing_date":"2021-04-23T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of making a semiconductor device including etching of a metal silicate using sequential and cyclic application of reactive gases","description":"A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supp","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515169","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515169","citation_suggestion":"Patentable. \"Method of making a semiconductor device including etching of a metal silicate using sequential and cyclic application of reactive gases\" (US-11515169). https://patentable.app/patents/US-11515169","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515169","json":"https://patentable.app/api/llm-context/US-11515169","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:24:30.190Z"}