{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515203","patent":{"patent_number":"US-11515203","title":"Selective deposition of conductive cap for fully-aligned-via (FAV)","assignee":null,"inventors":[],"filing_date":"2020-02-05T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods and systems for selective deposition of conductive a cap for FAV features are described. In an embodiment, a method may include receiving a substrate having an interlayer dielectrics (ILD) layer, the ILD layer having a recess, the recess having a conductive layer formed therein, the conductive layer comprising a first conductive material. Additionally, such a method may include forming a cap within a region defined by the recess and in contact with a surface of the conductive layer, the cap comprising a second conductive material. The method may also include forming a conformal etch stop layer in contact with a surface of the cap and in contact with a region of the ILD layer. Further, the method may include selectively etching the etch stop layer using a plasma etch process, wherein the plasma etch process removes the etch stop layer selective to the second conductive material comprising the cap."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective deposition of conductive cap for fully-aligned-via (FAV)","description":"Methods and systems for selective deposition of conductive a cap for FAV features are described. In an embodiment, a method may include receiving a substrate having an interlayer dielectrics (ILD) lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515203","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515203","citation_suggestion":"Patentable. \"Selective deposition of conductive cap for fully-aligned-via (FAV)\" (US-11515203). https://patentable.app/patents/US-11515203","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515203","json":"https://patentable.app/api/llm-context/US-11515203","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:37:23.221Z"}