{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515205","patent":{"patent_number":"US-11515205","title":"Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC product","assignee":null,"inventors":[],"filing_date":"2019-08-30T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"One illustrative method disclosed herein includes forming at least one first layer of insulating material above an upper surface of a top electrode of a memory cell, forming a patterned etch stop layer above the at least one first layer of insulating material, wherein the patterned etch stop layer has an opening that is positioned vertically above at least a portion of the upper surface of the top electrode and forming at least one second layer of insulating material above an upper surface of the etch stop layer. The method also includes forming a conductive contact opening that extends through the etch stop layer to expose at least a portion of the upper surface of the top electrode and forming a conductive contact structure in the conductive contact opening, wherein the conductive contact structure is conductively coupled to the upper surface of the top electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC product","description":"One illustrative method disclosed herein includes forming at least one first layer of insulating material above an upper surface of a top electrode of a memory cell, forming a patterned etch stop laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515205","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515205","citation_suggestion":"Patentable. \"Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC product\" (US-11515205). https://patentable.app/patents/US-11515205","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515205","json":"https://patentable.app/api/llm-context/US-11515205","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:17:46.182Z"}