{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515217","patent":{"patent_number":"US-11515217","title":"Complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate","assignee":null,"inventors":[],"filing_date":"2021-02-03T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"A method of forming a complementary metal oxide semiconductor (CMOS) device is provided. The method includes forming a separate gate structure on each of a pair of vertical fins, wherein the gate structures include a gate dielectric layer and a gate metal layer, and forming a protective liner layer on the gate structures. The method further includes heat treating the pair of gate structures, and replacing the protective liner layer with an encapsulation layer. The method further includes exposing a portion of the gate dielectric layer by recessing the encapsulation layer. The method further includes forming a top source/drain on the top surface of one of the pair of vertical fins, and subjecting the exposed portion of the gate dielectric layer to a second heat treatment conducted in an oxidizing atmosphere."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate","description":"A method of forming a complementary metal oxide semiconductor (CMOS) device is provided. The method includes forming a separate gate structure on each of a pair of vertical fins, wherein the gate stru","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515217","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515217","citation_suggestion":"Patentable. \"Complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate\" (US-11515217). https://patentable.app/patents/US-11515217","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515217","json":"https://patentable.app/api/llm-context/US-11515217","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:36:29.086Z"}