{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515250","patent":{"patent_number":"US-11515250","title":"Three dimensional semiconductor device containing composite contact via structures and methods of making the same","assignee":null,"inventors":[],"filing_date":"2021-02-03T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes at least one first semiconductor device located on a substrate, lower-level dielectric material layers embedding lower-level metal interconnect structures, at least one second semiconductor device and a dielectric material portion that overlie the lower-level dielectric material layers, at least one upper-level dielectric material layer, and an interconnection via structure vertically extending from the at least one upper-level dielectric material layer to a conductive structure that can be a node of the at least one first semiconductor device or one of lower-level metal interconnect structures. The interconnection via structure includes a transition metal layer and a fluorine-doped filler material portion in contact with the transition metal layer, composed primarily of a filler material selected from a silicide of the transition metal element or aluminum oxide, and including fluorine atoms."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three dimensional semiconductor device containing composite contact via structures and methods of making the same","description":"A semiconductor structure includes at least one first semiconductor device located on a substrate, lower-level dielectric material layers embedding lower-level metal interconnect structures, at least ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515250","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515250","citation_suggestion":"Patentable. \"Three dimensional semiconductor device containing composite contact via structures and methods of making the same\" (US-11515250). https://patentable.app/patents/US-11515250","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515250","json":"https://patentable.app/api/llm-context/US-11515250","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:30:57.503Z"}