{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515251","patent":{"patent_number":"US-11515251","title":"FinFET transistors as antifuse elements","assignee":null,"inventors":[],"filing_date":"2018-04-02T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","G11C","G11C","H01L"],"num_claims":20,"abstract":"Embodiments herein may describe techniques for an integrated circuit including a FinFET transistor to be used as an antifuse element having a path through a fin area to couple a source electrode and a drain electrode after a programming operation is performed. A FinFET transistor may include a source electrode in contact with a source area, a drain electrode in contact with a drain area, a fin area including silicon and between the source area and the drain area, and a gate electrode above the fin area and above the substrate. After a programming operation is performed to apply a programming voltage between the source electrode and the drain electrode to generate a current between the source electrode, the fin area, and the drain electrode, a path may be formed through the fin area to couple the source electrode and the drain electrode. Other embodiments may be described and/or claimed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET transistors as antifuse elements","description":"Embodiments herein may describe techniques for an integrated circuit including a FinFET transistor to be used as an antifuse element having a path through a fin area to couple a source electrode and a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515251","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515251","citation_suggestion":"Patentable. \"FinFET transistors as antifuse elements\" (US-11515251). https://patentable.app/patents/US-11515251","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515251","json":"https://patentable.app/api/llm-context/US-11515251","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:31:13.393Z"}