{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515260","patent":{"patent_number":"US-11515260","title":"Method for fabricating a semiconductor package","assignee":null,"inventors":[],"filing_date":"2020-05-14T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for fabricating a semiconductor package includes forming a release layer on a first carrier substrate. An etch stop layer is formed on the release layer. A first redistribution layer is formed on the etch stop layer and includes a plurality of first wires and a first insulation layer surrounding the plurality of first wires. A first semiconductor chip is formed on the first redistribution layer. A solder ball is formed between the first redistribution layer and the first semiconductor chip. A second carrier substrate is formed on the first semiconductor chip. The first carrier substrate, the release layer, and the etch stop layer are removed. The second carrier substrate is removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating a semiconductor package","description":"A method for fabricating a semiconductor package includes forming a release layer on a first carrier substrate. An etch stop layer is formed on the release layer. A first redistribution layer is forme","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515260","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515260","citation_suggestion":"Patentable. \"Method for fabricating a semiconductor package\" (US-11515260). https://patentable.app/patents/US-11515260","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515260","json":"https://patentable.app/api/llm-context/US-11515260","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:09:24.115Z"}