{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515313","patent":{"patent_number":"US-11515313","title":"Gated ferroelectric memory cells for memory cell array and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2020-11-13T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A gated ferroelectric memory cell includes a dielectric material layer disposed over a substrate, a metallic bottom electrode, a ferroelectric dielectric layer contacting a top surface of the bottom electrode, a pillar semiconductor channel overlying the ferroelectric dielectric layer and capacitively coupled to the metallic bottom electrode through the ferroelectric dielectric layer, a gate dielectric layer including a horizontal gate dielectric portion overlying the ferroelectric dielectric layer and a tubular gate dielectric portion laterally surrounding the pillar semiconductor channel, a gate electrode strip overlying the horizontal gate dielectric portion and laterally surrounding the tubular gate dielectric portion and a metallic top electrode contacting a top surface of the pillar semiconductor channel."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gated ferroelectric memory cells for memory cell array and methods of forming the same","description":"A gated ferroelectric memory cell includes a dielectric material layer disposed over a substrate, a metallic bottom electrode, a ferroelectric dielectric layer contacting a top surface of the bottom e","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515313","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515313","citation_suggestion":"Patentable. \"Gated ferroelectric memory cells for memory cell array and methods of forming the same\" (US-11515313). https://patentable.app/patents/US-11515313","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515313","json":"https://patentable.app/api/llm-context/US-11515313","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:16:57.099Z"}