{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515315","patent":{"patent_number":"US-11515315","title":"Single-layer polysilicon nonvolatile memory cell and memory including the same","assignee":null,"inventors":[],"filing_date":"2020-11-02T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"The present invention relates to a single-layer polysilicon nonvolatile memory cell, a group structure thereof and a memory including the same. The memory cell includes a selection transistor and a storage transistor, wherein the selection transistor is connected in series with the storage transistor; and the selection transistor and the storage transistor are arranged on a substrate in a mutually perpendicular manner. A memory cell group includes four memory cells, arranged in a center-symmetrical array of two rows×two columns. The memory comprises at least one memory cell group. The memory cell and the memory thereof are used as a one-time programming memory cell and memory, and have the advantages of small area, high programming efficiency and capability, and strong data retention capability."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Single-layer polysilicon nonvolatile memory cell and memory including the same","description":"The present invention relates to a single-layer polysilicon nonvolatile memory cell, a group structure thereof and a memory including the same. The memory cell includes a selection transistor and a st","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515315","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515315","citation_suggestion":"Patentable. \"Single-layer polysilicon nonvolatile memory cell and memory including the same\" (US-11515315). https://patentable.app/patents/US-11515315","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515315","json":"https://patentable.app/api/llm-context/US-11515315","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:39:01.411Z"}