{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515388","patent":{"patent_number":"US-11515388","title":"Semiconductor device with P-N junction isolation structure and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2020-12-18T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"The present application discloses a semiconductor device with a P-N junction isolation structure and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first well layer positioned in the substrate and having a first electrical type, a bottom conductive layer positioned in the first well layer and having a second electrical type opposite to the first electrical type, a first insulating layer positioned on the bottom conductive layer, an isolation-mask layer positioned on the substrate and enclosing the first insulating layer, a first conductive line positioned on the first insulating layer, and a bias layer positioned in the first well layer and spaced apart from the bottom conductive layer. The bottom conductive layer, the first insulating layer, and the first conductive line together configure a programmable unit."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with P-N junction isolation structure and method for fabricating the same","description":"The present application discloses a semiconductor device with a P-N junction isolation structure and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515388","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515388","citation_suggestion":"Patentable. \"Semiconductor device with P-N junction isolation structure and method for fabricating the same\" (US-11515388). https://patentable.app/patents/US-11515388","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515388","json":"https://patentable.app/api/llm-context/US-11515388","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:34:56.498Z"}