{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515394","patent":{"patent_number":"US-11515394","title":"Method for the nanoscale etching of a germanium-tin alloy (GeSn) for a FET transistor","assignee":null,"inventors":[],"filing_date":"2021-01-22T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","B82Y"],"num_claims":13,"abstract":"A method for the nanoscale etching of a layer of Ge1-xSnx on a carrier for a FET transistor, x being the concentration of tin in the GeSn alloy, the etching method includes a step of plasma-etching the layer of Ge1-xSnx using a mixture comprising dichlorine (Cl2) and dinitrogen (N2) and under an etching pressure lower than or equal to 50 mTorr, preferably lower than or equal to 10 mTorr. A method for producing a conduction channel on a carrier for a FET transistor, comprising a step of forming a layer of Ge1-xSnx on the carrier, the layer being produced by epitaxial growth, and a step of etching the layer of Ge1-xSnx according to the etching method. A conduction channel made of Ge1-xSnx for a FET transistor, the channel being obtained according to the production method, and a FET transistor comprising a plurality of conduction channels made of Ge1-xSnx."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for the nanoscale etching of a germanium-tin alloy (GeSn) for a FET transistor","description":"A method for the nanoscale etching of a layer of Ge1-xSnx on a carrier for a FET transistor, x being the concentration of tin in the GeSn alloy, the etching method includes a step of plasma-etching th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515394","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515394","citation_suggestion":"Patentable. \"Method for the nanoscale etching of a germanium-tin alloy (GeSn) for a FET transistor\" (US-11515394). https://patentable.app/patents/US-11515394","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515394","json":"https://patentable.app/api/llm-context/US-11515394","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:34:43.969Z"}