{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515399","patent":{"patent_number":"US-11515399","title":"Self-aligned contacts for walled nanosheet and forksheet field effect transistor devices","assignee":null,"inventors":[],"filing_date":"2020-12-04T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"In one aspect, a method of forming a semiconductor device can comprise forming a first transistor structure and a second transistor structure separated by a first trench which comprises a first dielectric wall protruding above a top surface of the transistor structures. The first and the second transistor structures each can comprise a plurality of stacked nanosheets forming a channel structure, and a source portion and a drain portion horizontally separated by the channel structure. The method further can comprise depositing a contact material over the transistor structures and the first dielectric wall, thereby filling the first trench and contacting a first source/drain portion of the first transistor structure and a first source/drain portion of the second transistor structure. Further, the method can comprise etching back the contact material layer below a top surface of the first dielectric wall, thereby forming a first contact contacting the first source/drain portion of the first transistor structure, and a second contact contacting the first source/drain portion of the second transistor structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned contacts for walled nanosheet and forksheet field effect transistor devices","description":"In one aspect, a method of forming a semiconductor device can comprise forming a first transistor structure and a second transistor structure separated by a first trench which comprises a first dielec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515399","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515399","citation_suggestion":"Patentable. \"Self-aligned contacts for walled nanosheet and forksheet field effect transistor devices\" (US-11515399). https://patentable.app/patents/US-11515399","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515399","json":"https://patentable.app/api/llm-context/US-11515399","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:19:21.310Z"}