{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515404","patent":{"patent_number":"US-11515404","title":"Semiconductor structure comprising regions having an isolation trench with a stepped bottom surface therebetween and method of forming the same","assignee":null,"inventors":[],"filing_date":"2021-01-28T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":18,"abstract":"A semiconductor structure includes a substrate having a first region and a second region around the first region. A first fin structure is disposed within the first region. A second fin structure is disposed within the second region. A first isolation trench is disposed within the first region and situated adjacent to the first fin structure. A first trench isolation layer is disposed in the first isolation trench. A second isolation trench is disposed around the first region and situated between the first fin structure and the second fin structure. The bottom surface of the second isolation trench has a step height. A second isolation layer is disposed in the second isolation trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure comprising regions having an isolation trench with a stepped bottom surface therebetween and method of forming the same","description":"A semiconductor structure includes a substrate having a first region and a second region around the first region. A first fin structure is disposed within the first region. A second fin structure is d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515404","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515404","citation_suggestion":"Patentable. \"Semiconductor structure comprising regions having an isolation trench with a stepped bottom surface therebetween and method of forming the same\" (US-11515404). https://patentable.app/patents/US-11515404","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515404","json":"https://patentable.app/api/llm-context/US-11515404","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:38:38.458Z"}