{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515407","patent":{"patent_number":"US-11515407","title":"High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS","assignee":null,"inventors":[],"filing_date":"2018-12-26T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"An integrated circuit structure comprises a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region include a group III-N semiconductor material, wherein the relaxed buffer stack comprises a plurality of AlGaN material layers and a buffer stack is located over over the plurality of AlGaN material layers, wherein the buffer stack comprises the group III-N semiconductor material and has a thickness of less than approximately 25 nm. A back barrier is in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2-10% Al. A polarization stack over the relaxed buffer stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS","description":"An integrated circuit structure comprises a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region include a group III-N semiconductor material, w","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515407","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515407","citation_suggestion":"Patentable. \"High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS\" (US-11515407). https://patentable.app/patents/US-11515407","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515407","json":"https://patentable.app/api/llm-context/US-11515407","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:23:01.239Z"}