{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515420","patent":{"patent_number":"US-11515420","title":"Contacts to n-type transistors with X-valley layer over L-valley channels","assignee":null,"inventors":[],"filing_date":"2017-09-29T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"An apparatus is provided which comprises: a first region over a substrate, wherein the first region comprises a first semiconductor material having a L-valley transport energy band structure, a second region in contact with the first region at a junction, wherein the second region comprises a second semiconductor material having a X-valley transport energy band structure, wherein a <111> crystal direction of one or more crystals of the first and second semiconductor materials are substantially orthogonal to the junction, and a metal adjacent to the second region, the metal conductively coupled to the first region through the junction. Other embodiments are also disclosed and claimed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contacts to n-type transistors with X-valley layer over L-valley channels","description":"An apparatus is provided which comprises: a first region over a substrate, wherein the first region comprises a first semiconductor material having a L-valley transport energy band structure, a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515420","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515420","citation_suggestion":"Patentable. \"Contacts to n-type transistors with X-valley layer over L-valley channels\" (US-11515420). https://patentable.app/patents/US-11515420","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515420","json":"https://patentable.app/api/llm-context/US-11515420","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:35:15.838Z"}