{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11515424","patent":{"patent_number":"US-11515424","title":"Field-effect transistors with asymmetric gate stacks","assignee":null,"inventors":[],"filing_date":"2019-02-08T00:00:00.000Z","publication_date":"2022-11-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Disclosed herein are field-effect transistors with asymmetric gate stacks. An example transistor includes a channel material and an asymmetric gate stack, provided over a portion of the channel material between source and drain (S/D) regions. The gate stack is asymmetric in that a thickness of a gate dielectric of a portion of the gate stack closer to one of the S/D regions is different from that of a portion of the gate stack closer to the other S/D region, and in that a work function (WF) material of a portion of the gate stack closer to one of the S/D regions is different from a WF material of a portion of the gate stack closer to the other S/D region. Transistors as described herein exploit asymmetry in the gate stacks to improve the transistor performance in terms of high breakdown voltage, high gain, and/or high output resistance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field-effect transistors with asymmetric gate stacks","description":"Disclosed herein are field-effect transistors with asymmetric gate stacks. An example transistor includes a channel material and an asymmetric gate stack, provided over a portion of the channel materi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11515424","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11515424","citation_suggestion":"Patentable. \"Field-effect transistors with asymmetric gate stacks\" (US-11515424). https://patentable.app/patents/US-11515424","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11515424","json":"https://patentable.app/api/llm-context/US-11515424","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:29:25.501Z"}