{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11519067","patent":{"patent_number":"US-11519067","title":"Method for depositing a silicon nitride film and film deposition apparatus","assignee":null,"inventors":[],"filing_date":"2019-07-19T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method for depositing a silicon nitride film is provided. A silicon nitride film is deposited in a depression formed in a surface of a substrate from a bottom surface and a lateral surface by ALD toward a center of the depression in a lateral direction so as to narrow a space at the center of the depression. First nitrogen radicals are adsorbed into the depression immediately before a stage of filling the space at the center with the silicon nitride film deposited toward the center of the depression. A silicon-containing gas is adsorbed on the first nitrogen radical in the depression by physical adsorption. Second nitrogen radicals are supplied into the depression so as to release the silicon-containing gas from the first nitrogen radical and to cause the released silicon-containing gas to react with the second nitrogen radical, thereby depositing a silicon nitride film to fill the central space."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for depositing a silicon nitride film and film deposition apparatus","description":"A method for depositing a silicon nitride film is provided. A silicon nitride film is deposited in a depression formed in a surface of a substrate from a bottom surface and a lateral surface by ALD to","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11519067","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11519067","citation_suggestion":"Patentable. \"Method for depositing a silicon nitride film and film deposition apparatus\" (US-11519067). https://patentable.app/patents/US-11519067","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11519067","json":"https://patentable.app/api/llm-context/US-11519067","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:42:29.689Z"}