{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11519720","patent":{"patent_number":"US-11519720","title":"Depth profiling of semiconductor structures using picosecond ultrasonics","assignee":null,"inventors":[],"filing_date":"2020-10-12T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["G01N","G01N","G01N","G01N","G01N","G01N","G01N","G01N","G01N","G01N"],"num_claims":20,"abstract":"Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes obtaining measured signals of the sample and analyzing thereof to obtain a depth-dependence of at least one parameter characterizing the lateral structural feature. The measured signals are obtained by repeatedly: projecting a pump pulse on the sample, thereby producing an acoustic pulse propagating within the target region; Brillouin-scattering a probe pulse off the acoustic pulse within the target region; and detecting a scattered component of the probe pulse to obtain a measured signal. In each repetition the respective probe pulse is scattered off the acoustic pulse at a respective depth within the target region, thereby probing the target region at a plurality of depths. A wavelength of the pump pulse is at least about two times greater than a lateral extent of the lateral structural feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Depth profiling of semiconductor structures using picosecond ultrasonics","description":"Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes obtaining measured signals of the sample and analyzing","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11519720","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11519720","citation_suggestion":"Patentable. \"Depth profiling of semiconductor structures using picosecond ultrasonics\" (US-11519720). https://patentable.app/patents/US-11519720","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11519720","json":"https://patentable.app/api/llm-context/US-11519720","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:41:24.397Z"}