{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521670","patent":{"patent_number":"US-11521670","title":"Word lines coupled to pull-down transistors, and related devices, systems, and methods","assignee":null,"inventors":[],"filing_date":"2020-11-12T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":12,"abstract":"Memory devices including word lines coupled to pull-down transistors are disclosed. A memory device may include a number of memory cells, a first word line, and a second word line. The first word line may be configured to apply a voltage to a number of transistors to access at least one of the number of memory cells. The first word line may include a first portion electrically coupled to a first driver and a second portion electrically coupled to a gate of a pull-down transistor. The second word line may be positioned adjacent to the first word line. The second word line may include a third portion electrically coupled to a second driver and a fourth portion electrically coupled to a terminal of the pull-down transistor. Associated systems are also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Word lines coupled to pull-down transistors, and related devices, systems, and methods","description":"Memory devices including word lines coupled to pull-down transistors are disclosed. A memory device may include a number of memory cells, a first word line, and a second word line. The first word line","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521670","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521670","citation_suggestion":"Patentable. \"Word lines coupled to pull-down transistors, and related devices, systems, and methods\" (US-11521670). https://patentable.app/patents/US-11521670","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521670","json":"https://patentable.app/api/llm-context/US-11521670","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:22:24.168Z"}