{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521851","patent":{"patent_number":"US-11521851","title":"Method of forming structures including a vanadium or indium layer","assignee":null,"inventors":[],"filing_date":"2021-01-29T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":15,"abstract":"Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming structures including a vanadium or indium layer","description":"Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521851","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521851","citation_suggestion":"Patentable. \"Method of forming structures including a vanadium or indium layer\" (US-11521851). https://patentable.app/patents/US-11521851","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521851","json":"https://patentable.app/api/llm-context/US-11521851","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:16:22.575Z"}