{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521859","patent":{"patent_number":"US-11521859","title":"Non-phosphoric acid-based silicon nitride film etching composition and etching method using the same","assignee":null,"inventors":[],"filing_date":"2021-06-29T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A non-phosphoric acid-based silicon nitride film etching composition includes 5 to 50 wt % of an organic acid-based chelating agent including an organic phosphonic acid group, a carboxylic acid group, or a combination thereof, based on a total weight of the etching composition. The etching composition for pressurization suppresses etching a silicon oxide film and selectively etches a silicon nitride film in a vertically laminated structure in which both the silicon nitride film and the silicon oxide film are exposed to a surface or the silicon nitride film and the silicon oxide film are alternately laminated."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-phosphoric acid-based silicon nitride film etching composition and etching method using the same","description":"A non-phosphoric acid-based silicon nitride film etching composition includes 5 to 50 wt % of an organic acid-based chelating agent including an organic phosphonic acid group, a carboxylic acid group,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521859","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521859","citation_suggestion":"Patentable. \"Non-phosphoric acid-based silicon nitride film etching composition and etching method using the same\" (US-11521859). https://patentable.app/patents/US-11521859","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521859","json":"https://patentable.app/api/llm-context/US-11521859","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:01:33.172Z"}