{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521866","patent":{"patent_number":"US-11521866","title":"Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus","assignee":null,"inventors":[],"filing_date":"2021-03-11T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus","description":"In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave ha","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521866","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521866","citation_suggestion":"Patentable. \"Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus\" (US-11521866). https://patentable.app/patents/US-11521866","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521866","json":"https://patentable.app/api/llm-context/US-11521866","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:33:22.993Z"}