{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521891","patent":{"patent_number":"US-11521891","title":"Semiconductor device comprising a deep trench isolation structure and a trap rich isolation structure in a substrate and a method of making the same","assignee":null,"inventors":[],"filing_date":"2021-06-06T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A semiconductor device includes: a metal-oxide semiconductor (MOS) transistor on a substrate; a deep trench isolation structure in the substrate and around the MOS transistor; and a trap rich isolation structure in the substrate and surrounding the deep trench isolation structure. Preferably, the deep trench isolation structure includes a liner in the substrate and an insulating layer on the liner, in which the top surfaces of the liner and the insulating layer are coplanar. The trap rich isolation structure is made of undoped polysilicon and the trap rich isolation structure includes a ring surrounding the deep trench isolation structure according to a top view."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device comprising a deep trench isolation structure and a trap rich isolation structure in a substrate and a method of making the same","description":"A semiconductor device includes: a metal-oxide semiconductor (MOS) transistor on a substrate; a deep trench isolation structure in the substrate and around the MOS transistor; and a trap rich isolatio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521891","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521891","citation_suggestion":"Patentable. \"Semiconductor device comprising a deep trench isolation structure and a trap rich isolation structure in a substrate and a method of making the same\" (US-11521891). https://patentable.app/patents/US-11521891","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521891","json":"https://patentable.app/api/llm-context/US-11521891","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:15:41.928Z"}