{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521898","patent":{"patent_number":"US-11521898","title":"Three-dimensional NAND flash memory device and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2020-11-12T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A memory device is provided. The memory device includes a substrate, a stacked structure, and a contact. The substrate includes a memory array region and a staircase region. The stacked structure is located on the substrate in the memory array region and the staircase region. The stacked structure includes a plurality of conductive layers and a plurality of insulating layers alternately stacked on each other. Each of the plurality of conductive layers includes a main body and an end part. The main body is located in the memory array region and extends to the staircase region. The end part is connected to the main body and is located in the staircase region. A thickness of the end part is greater than a thickness of the main body. The contact lands on and is connected to the end part."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional NAND flash memory device and method of fabricating the same","description":"A memory device is provided. The memory device includes a substrate, a stacked structure, and a contact. The substrate includes a memory array region and a staircase region. The stacked structure is l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521898","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521898","citation_suggestion":"Patentable. \"Three-dimensional NAND flash memory device and method of fabricating the same\" (US-11521898). https://patentable.app/patents/US-11521898","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521898","json":"https://patentable.app/api/llm-context/US-11521898","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:24:16.934Z"}