{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521902","patent":{"patent_number":"US-11521902","title":"Vertical field-effect transistor (VFET) devices and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2020-09-25T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Vertical field-effect transistor (VFET) devices and methods of forming the devices are provided. The methods may include forming a channel region including a first channel region and a second channel region, forming a first cavity in the substrate, forming a first bottom source/drain in the first cavity, forming a second cavity in the substrate, and forming a second bottom source/drain in the second cavity. The first cavity may expose a lower surface of the first channel region, and the second cavity may expose a lower surface of the second channel region. The method may also include after forming the first bottom source/drain and the second bottom source/drain, removing a portion of the channel region between the first channel region and the second channel region to separate the first channel region from the second channel region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical field-effect transistor (VFET) devices and methods of forming the same","description":"Vertical field-effect transistor (VFET) devices and methods of forming the devices are provided. The methods may include forming a channel region including a first channel region and a second channel ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521902","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521902","citation_suggestion":"Patentable. \"Vertical field-effect transistor (VFET) devices and methods of forming the same\" (US-11521902). https://patentable.app/patents/US-11521902","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521902","json":"https://patentable.app/api/llm-context/US-11521902","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:47:31.973Z"}