{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521916","patent":{"patent_number":"US-11521916","title":"Method for fabricating semiconductor device with etch stop layer having greater thickness","assignee":null,"inventors":[],"filing_date":"2022-03-11T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"The present application discloses provides a method for fabricating a semiconductor device including providing a first semiconductor die including a first conductive layer, forming a first etch stop layer on the first conductive layer, bonding a second semiconductor die, which includes a second conductive layer above the first etch stop layer and a second etch stop layer on the second conductive layer, onto the first etch stop layer, performing a via etch process to concurrently form a first via opening to expose the first etch stop layer and a second via opening to expose the second etch stop layer, conformally forming isolation layers in the first via opening and the second via opening, performing a punch etch process to extend the first via opening and the second via opening, and concurrently forming a first through substrate via in the first via opening and a second through substrate via in the second via opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor device with etch stop layer having greater thickness","description":"The present application discloses provides a method for fabricating a semiconductor device including providing a first semiconductor die including a first conductive layer, forming a first etch stop l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521916","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521916","citation_suggestion":"Patentable. \"Method for fabricating semiconductor device with etch stop layer having greater thickness\" (US-11521916). https://patentable.app/patents/US-11521916","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521916","json":"https://patentable.app/api/llm-context/US-11521916","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:59:33.847Z"}