{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521927","patent":{"patent_number":"US-11521927","title":"Buried power rail for scaled vertical transport field effect transistor","assignee":null,"inventors":[],"filing_date":"2020-11-10T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure may include a buried power rail under a bottom source drain of a vertical transistor and a dielectric bi-layer under the bottom source drain. The dielectric bi-layer may be between the buried power rail and the bottom source drain. The semiconductor structure may include a silicon germanium bi-layer under the bottom source drain, the silicon germanium bi-layer may be adjacent to the buried power rail. The semiconductor structure may include a buried power rail contact. The buried power rail contact may connect the bottom source drain to the buried power rail. The dielectric bi-layer may include a first dielectric layer and a dielectric liner. The first dielectric layer may be in direct contact with the bottom source drain. The dielectric liner may surround the buried power rail. The silicon germanium bi-layer may include a first semiconductor layer and a second semiconductor layer below the first semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Buried power rail for scaled vertical transport field effect transistor","description":"A semiconductor structure may include a buried power rail under a bottom source drain of a vertical transistor and a dielectric bi-layer under the bottom source drain. The dielectric bi-layer may be b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521927","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521927","citation_suggestion":"Patentable. \"Buried power rail for scaled vertical transport field effect transistor\" (US-11521927). https://patentable.app/patents/US-11521927","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521927","json":"https://patentable.app/api/llm-context/US-11521927","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:36:15.811Z"}