{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521941","patent":{"patent_number":"US-11521941","title":"Semiconductor device with a substrate having depressions formed thereon","assignee":null,"inventors":[],"filing_date":"2020-12-28T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A semiconductor device including a semiconductor chip disposed on a substrate having a conductive pattern, an insulating plate and a metal plate that are sequentially formed and respectively have the thicknesses of T2, T1 and T3. The metal plate has a plurality of depressions formed on a rear surface thereof. In a side view, a first edge face, which is an edge face of the conductive pattern, is at a first distance away from a second edge face that is an edge face of the metal plate, and a third edge face, which is an edge face of the semiconductor chip, is at a second distance away from the second edge face. Each depression is located within a depression formation distance from the first edge face, where: 0<depression formation distance≤(0.9×T12/first distance), and/or (1.1×T12/first distance)≤depression formation distance<second distance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with a substrate having depressions formed thereon","description":"A semiconductor device including a semiconductor chip disposed on a substrate having a conductive pattern, an insulating plate and a metal plate that are sequentially formed and respectively have the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521941","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521941","citation_suggestion":"Patentable. \"Semiconductor device with a substrate having depressions formed thereon\" (US-11521941). https://patentable.app/patents/US-11521941","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521941","json":"https://patentable.app/api/llm-context/US-11521941","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:58:56.744Z"}